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DMN2004VK
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 8
Units
V
V
Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 85°C
I D
540
390
mA
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
I DM
Symbol
P D
R θ JA
T J, T STG
1.5
Value
250
500
-55 to +150
A
Units
mW
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
1
± 1
V
μ A
μ A
V GS = 0V, I D = 10 μ A
V DS = 16V, V GS = 0V
V GS = ± 4.5V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
0.5
?
?
0.4
0.5
1.0
0.55
0.70
V
Ω
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 540mA
V GS = 2.5V, I D = 500mA
0.7
0.9
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
200
0.5
?
?
?
1.4
ms
V
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
150
25
20
pF
pF
pF
V DS = 16V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
?
?
?
?
8.0
13.3
53.5
36.1
?
?
?
?
ns
ns
ns
ns
V DD = 10V, R L = 47 ? ,
I D = 200mA. V GEN = 4.5V,
R G = 10 ?
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
DMN2004VK
Document number: DS30865 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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